基本信息
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Bio
Sergey I. Stepanov received the M.S. degree in optoelectronics from Saint Petersburg Electrotechnical University, Russia, in 1996, and the Ph.D. degree in physics from the University of Bath, U.K., in 2003. He has held various research positions at Cree EED, Bath University, IQE, and ITMO University. He is currently a Research Scientist with the Ioffe Institute. He has authored several chapters in scientific books and numerous research articles in refereed journals. His research interests include physics of semiconductor devices, wide bandgap semiconductors, crystal growth, and epitaxy.
Research Interests
Papers共 100 篇Author StatisticsCo-AuthorSimilar Experts
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Materials Science in Semiconductor Processing (2024): 108778
Кристаллографияno. 1 (2024): 34-39
Crystallography Reportsno. 1 (2024): 23-28
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)
JOURNAL OF APPLIED PHYSICSno. 12 (2024)
Materialia (2023): 101942-101942
Письма в журнал технической физикиno. 2 (2023)
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Author Statistics
#Papers: 100
#Citation: 1104
H-Index: 20
G-Index: 29
Sociability: 6
Diversity: 2
Activity: 9
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