Andrea Knigge

Andrea Knigge received the Diploma in physics from Technische Universität München, Munich, Germany, in 1994 and the Ph.D. degree from Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany, in 2000, on high-power laser diodes with InGaAsP-quantum wells for wavelengths near 800 nm. She focused on the optimization of high-efficient laser structures for 940 nm and red surface emitting lasers with wavelengths about 650 nm. In 2009, she was involved in the AlGaN material system and developed UV photodetectors. Since 2015, she has been dealing with GaAs-based laser diodes. She is currently the Head of Optoelectronics Department, FBH, with the focus on the chip technology of all FBH laser chips including the facet passivation. She is also responsible for the development in pulsed operation, i.e., for light detection and ranging applications and for pump laser diodes used in free-space optical communication.