基本信息
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个人简介
Dr. Neureuther has pioneered modeling and simulation of integrated circuit processing for many physical process effects as well as the use of these tools to explore innovation and manufacturing issues in emerging technologies. His work includes models for chemically amplified imaging materials (STORM), simulation of optical, electron, ion beam and x-ray lithography (SAMPLE), assessment of residual effects of defects and lens aberrations (SPLAT), electromagnetic scattering (TEMPEST), time-evolution of topography (SAMPLE3D), environments for integrating simulators with process flow (SIMPL) and remote web-based simulation (LAVA).
研究兴趣
论文共 276 篇作者统计合作学者相似作者
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Qi Zhang,Weilun Chao, Warren D. Holcomb,Ryan H. Miyakawa,Dinesh Kumar, Ricardo Ruiz,Andrew R. Neureuther,Patrick P. Naulleau,Cheng Wang
Metrology, Inspection, and Process Control XXXVIII (2024)
Qi Zhang, Weilun Chao, Warren Holcomb,Ryan Miyakawa, Ricardo Ruiz, Dinesh Kumar,Andrew Neureuther,Patrick Naulleau,Cheng Wang
International Conference on Extreme Ultraviolet Lithography 2023 (2023)
Optical and EUV Nanolithography XXXV (2022)
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2022 (2022)
Extreme Ultraviolet (EUV) Lithography XII (2021)
Extreme Ultraviolet (EUV) Lithography XII (2021)
Extreme Ultraviolet (EUV) Lithography XI (2020)
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作者统计
#Papers: 276
#Citation: 4849
H-Index: 29
G-Index: 59
Sociability: 6
Diversity: 2
Activity: 0
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