Balaji Narasimham

Balaji Narasimham (S'02–M'09) received the B.E. degree in electrical engineering from the University of Madras, Chennai, India, in 2003 and the M.S. and Ph.D. degrees in electrical engineering from Vanderbilt University, Nashville, TN, in 2005 and 2008, respectively. He is currently a Staff Reliability Scientist with Broadcom Corporation, Irvine, CA, where his work focuses on device- and circuit-level reliability and characterization of soft errors for memory and logic circuits. He was with Intel Corporation, Hillsboro, OR, and IBM T. J. Watson Research Center, Yorktown Heights, NY, where he held a graduate level cooperative position. His research interests include CMOS circuit design, radiation effects and reliability of semiconductor devices and circuits. He has authored or coauthored over 30 papers related to his research and has authored a book chapter on single-event transients. Dr. Narasimham has served in the technical committee of IRPS and is the recipient of the Best Paper Award at the 2007 RADECS conference.