Blacksmith Wu - ChangXin Memory Technologies

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On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

Da Wang,Yongkang Xue, Yong Liu,Pengpeng Ren,Zixuan Sun,Zirui Wang,Zhijun Cheng,Haiyang Yang,Xiangli Liu,Blacksmith Wu,Kanyu Cao,Zhigang Ji,Runsheng Wang,Ru Huang

IEEE ELECTRON DEVICE LETTERSno. 9 (2024): 1582-1585

引用0浏览0EIWOS引用

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification

Da Wang,Yongkang Xue,Yong Liu,Pengpeng Ren,Zixuan Sun,Zirui Wang,Yueyang Liu,Zhijun Cheng,Haiyang Yang,Xiangli Liu,Blacksmith Wu,Kanyu Cao,Runsheng Wang,Zhigang Ji,Ru Huang

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

引用1浏览0EIWOS引用

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-Nm DRAM Node—Part I: Defect-Based Statistical Compact Model

Yong Liu,Da Wang,Pengpeng Ren,Jie Li,Zheng Qiao,Maokun Wu,Yichen Wen,Longda Zhou,Zixuan Sun,Zirui Wang,Qinghua Han,Blacksmith Wu,Kanyu Cao,Runsheng Wang,Zhigang Ji,Ru Huang

IEEE Transactions on Electron Devicesno. 8 (2024): 4462-4468

引用0浏览0EIWOS引用

Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology: from Characterization to Physical Origin Identification

Da Wang,Yong Liu,Yongkang Xue,Pengpeng Ren, Zixuan Sung,Zirui Wang,Yueyang Liu,Zhijun Cheng,Haiyang Yang,Xiangli Liu,Blacksmith Wu,Kanyu Cao,Runsheng Wang,Zhigang Ji,Ru Huang

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.79-81, (2024)

引用0浏览0EIWOS引用

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Yong Liu,Da Wang,Pengpeng Ren,Jie Li,Zheng Qiao,Maokun Wu,Yichen Wen,Longda Zhou,Zixuan Sun,Zirui Wang,Qinghua Han,Blacksmith Wu,Kanyu Cao,Runsheng Wang,Zhigang Ji,Ru Huang

IEEE Transactions on Electron Devices（2024）

引用3浏览0EIWOS引用

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Da Wang,Longda Zhou,Yongkang Xue,Pengpeng Ren,Zixuan Sun,Zirui Wang,Jianping Wang,Blacksmith Wu,Zhigang Ji,Runsheng Wang,Ru Huang

IEEE ELECTRON DEVICE LETTERSno. 6 (2023): 939-942

引用3浏览0EIWOS引用

Dielectric Relaxation Performance of DRAM Storage Capacitors and Ways of Improvement

Z. Asher Bai, Yixian Wang, Lixue Liu,Xi Zhang, Feng Yuan,Junsheng Meng,Zhongming Liu,Js Jeon, James Cho,Blacksmith Wu, Huihui Li,Guilei Wang,Chao Zhao,Kanyu Cao

2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMWpp.69-72, (2023)

引用0浏览0EIWOS引用

Double-sided Row Hammer Effect in Sub-20 Nm DRAM: Physical Mechanism, Key Features and Mitigation

Longda Zhou,Jie Li,Zheng Qiao,Pengpeng Ren,Zixuan Sun,Jianping Wang,Blacksmith Wu,Zhigang Ji,Runsheng Wang,Kanyu Cao,Ru Huang

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS (2023)

引用10浏览0EIWOS引用

TCAD Simulation on Saddle-Fin Device Performance Boosting with Word Line Engineering

Xiang Liu,Yumeng Sun, Debin Li,Jongsung Jeon,Blacksmith Wu

2023 6th International Conference on Electronics Technology (ICET)pp.358-361, (2023)

引用0浏览0EIWOS引用

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery Pfets under Arbitrary Condition

Da Wang,Longda Zhou,Yongkang Xue,Pengpeng Ren,Lining Zhang, Xiong Li,Xiangli Liu,Jianping Wang,Blacksmith Wu,Zhigang Ji,Runsheng Wang,Kanyu Cao,Ru Huang

IEEE Transactions on Electron Devicesno. 12 (2022): 6669-6675

引用2浏览0EIWOS引用

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