In 1886, Dr. Bulucea defected to the US, where he first developed a device/process architecture for rugged trench power DMOS transistors, while working for Siliconix (1987-1989). His inventive design became a world standard in the following years. Later on, at National Semiconductor (NS), he was a member of the Fairchild Research Center, then joined the company’s process development group. There, he enjoyed the last ten years of Silicon Valley's "Happy Scaling", introducing the surface-channel CMOS architecture into company's culture and applying it to several analog and mixed-signal processes (2000-2010). In 2011, he became a Distinguished Member of the Technical Staff of Texas Instruments (TI) as the result of TI's acquisition of NS. Throughout his tenure at NS/TI and after his retirement in 2012, he received four Patent of the Year awards, in recognition of the use of his inventions in high-volume manufacturing. He has published over 50 technical articles in major journals and has 69 issued US patents. In 2001, he was elected an Honorary Member of the Romanian Academy and in 2004 became an IEEE Fellow "for contributions to transistor engineering in the area of power electronics".