The main interest is the integration of new nanomaterials and devices with silicon electronic processing, with special emphasis on the semiconductor characteristics of oxides, chalcogenides and carbides. His recent breakthroughs in these fields include the first 100 nm GeSbTe phase change memory by (non-aqueous) electrodeposition, SiC resistance memory with a record 9-order on/off ratio and neuromorphological characteristics, selective growth of electrical materials Bi 2 Te 3 and Sb 2 Te 3 by thermal chemical vapor deposition, transistor fabrication based on electrodeposited two-dimensional materials (such as MoS 2), and room temperature operation of intelligent radiation cooling film based on W-doped VO 2 with strong emissivity contrast.