C. Wiegand - Intel | 人才画像

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论文共 22 篇作者统计合作学者相似作者

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CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist

Noriyuki Sato, Gary A. Allen, William P. Benson, Benjamin Buford, Atreyee Chakraborty,Michael Christenson,Tanay A. Gosavi, Philip E. Heil, Nafees A. Kabirl, Brian J. Kristl, Kevin P. O'Brien,Kaan Oguz, Rohan R. Patil, James Pellegren,Angeline K. Smith,Emily S. Walker,Patrick J. Hentges,Matthew Metz, Mansi Seth, Bob Turkot,Christopher J. Wiegand,Hui Jae Yoo,Ian A. Young

2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2020）

引用23浏览0EIWOS引用

2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications

J. G. Alzate,U. Arslan,P. Bai,J. Brockman,Y. J. Chen,N. Das,K. Fischer,T. Ghani,P. Heil,P. Hentges,R. Jahan,A. Littlejohn, M. Mainuddin,D. Ouellette, J. Pellegren,T. Pramanik,C. Puls,P. Quintero,T. Rahman,M. Sekhar,B. Sell,M. Seth,A. J. Smith, A. K. Smith,L. Wei,C. Wiegand,O. Golonzka,F. Hamzaoglu

2019 IEEE International Electron Devices Meeting (IEDM)（2019）

引用98浏览0EIWOS引用

Non-Volatile RRAM Embedded into 22FFL FinFET Technology

O. Golonzka,U. Arslan,P. Bai,M. Bohr,O. Baykan,Y. Chang, A. Chaudhari,A. Chen,J. Clarke,C. Connor,N. Das, C. English,T. Ghani,F. Hamzaoglu,P. Hentges,P. Jain,C. Jezewski,I Karpov,H. Kothari,R. Kotlyar, B. Lin,M. Metz, J. Odonnell,D. Ouellette,J. Park, A. Pirkle,P. Quintero,D. Seghete,M. Sekhar,A. Sen Gupta,M. Seth,N. Strutt,C. Wiegand,H. J. Yoo,K. Fischer

2019 SYMPOSIUM ON VLSI TECHNOLOGY（2019）

引用64浏览0EIWOS引用

MRAM As Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

O. Golonzka,J. -G. Alzate,U. Arslan,M. Bohr,P. Bai,J. Brockman, B. Buford,C. Connor,N. Das,B. Doyle,T. Ghani,F. Hamzaoglu,P. Heil,P. Hentges,R. Jahan,D. Kencke, B. Lin, M. Lu, M. Mainuddin, M. Meterelliyoz,P. Nguyen,D. Nikonov, K. O'brien,J. ODonnell,K. Oguz,D. Ouellette,J. Park, J. Pellegren,C. Puls,P. Quintero,T. Rahman, A. Romang,M. Sekhar, A. Selarka,M. Seth,A. J. Smith, A. K. Smith,L. Wei,C. Wiegand, Z. Zhang,K. Fischer

2018 IEEE International Electron Devices Meeting (IEDM)（2018）

引用140浏览0EIWOS引用

140

TRANSISTORS À CONTACTS DE SOURCE ET DE DRAIN MÉTALLIQUES COMPRENANT UN ALLIAGE DE HEUSLER

Sasikanth Manipatruni,Chaudhry Anurag,Dmitri E. Nikonov, Jasmeet S. Chawla,Christopher J. Wiegand, Singh Kanwaljit,Uygar E. Avci,Ian A. Young

semanticscholar（2018）

引用0浏览0引用

METHODS OF FORMING A MAGNETIC RANDOM ACCESS MEMORY ETCH SPACER AND STRUCTURES FORMED THEREBY

Daniel R Lamborn,Oleg Golonzka,Christopher Wiegand

mag（2015）

引用23浏览0引用

INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS

Srijit Mukherjee,C Wiegand, Tyler J Weeks,Mark Y Liu, Michael L Hattendorf

mag（2014）

引用29浏览0引用

Intrinsic Transistor Reliability Improvements From 22nm Tri-Gate Technology

Stephen M Ramey, A Ashutosh,C Auth, John J Clifford,M Hattendorf,J Hicks, Rob James,Aminur Rahman, Vishal Sharma,A St Amour,C Wiegand

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2013)

引用156浏览0EIWOS引用

156

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