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论文共 48 篇作者统计合作学者相似作者

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Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond
R. Bao, Y. Oniki, X. He, Y. Isobe, P. Hundekar, S. Matsuyama,S. Mignot, S. Kawamoto, A. V. Ramirez, H. Abe, A. Chou, T. Hamada, W. Parkin,M. Sankarapandian,P. Jamison,A. Reznicek, S. Sudhindra, Y. Murakami, T. McDonough, S. Kumar, W. Zhao, H. Zhou, J. Li, G. Bajpai,E. Miller,I. Seshadri, L. Qin, C. Adams, M. Wang, Y. Zhu,B. Peethala,D. K. Sohn, M. Lagus, K. Zhao, R. Mo,E. Leobandung, K. Tomida,D. Guo, Y. Fukuzaki,H. Bu
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials
R. J. Carter,R. Sporer,T. J. McArdle,G. R. Mulfinger,J. R. Holt, S. Beasor, A. Child,J. Fronheiser,J. A. Wahl, H. Geisler, G. J. Kluth,D. H. Triyoso,K. Punchihewa, U. Rana,L. Vanamurthy,D. K. Sohn
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 8no. 6 (2018): 3-10
引用3浏览0引用
3
0
14Nm FinFET Technology SRAM Cell Margin Evaluation and Analysis by Local Layout Effect
S. Y. Mun,D. Burnett,K. Y. Lim,S. Parihar, Y. J. Shi,H. C. Lo,W. Hong, K. J. Lee,O. Hu,J. Versaggi, C. Jerome, J. G. Lee,S. B. Samavedam,D. K. Sohn
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conferencepp.1-2, (2017)
引用2浏览0EIWOS引用
2
0
A 7nm Cmos Technology Platform For Mobile And High Performance Compute Application
S. Narasimha,B. Jagannathan,A. Ogino,D. Jaeger,Brian J. Greene,C. Sheraw,K. Zhao, B. S. Haran,Unoh Kwon, A. K. M. Mahalingam,B. Kannan, B. Morganfeld,J. Dechene,C. Radens, A. Tessier,A. Hassan, H. Narisetty,I. Ahsan,M. Aminpur, C. An,M. Aquilino,A. Arya,Rod Augur, N. Baliga, R. Bhelkar,G. Biery,A. Blauberg, N. Borjemscaia,A. Bryant,L. Cao, V. Chauhan, M. Chen, L. Cheng, J. Choo,C. Christiansen,Tao Chu,B. Cohen, R. Coleman,D. Conklin, S. Crown, A. da Silva,D. Dechene, G. Derderian, S. Deshpande, G. Dilliway, K. Donegan,Manfred Eller, Y. Fan,Q. Fang, A. Gassaria,R. Gauthier,S. Ghosh, G. Gifford,T. Gordon,M. Gribelyuk, G. Han, J.H. Han, K. Han, M. Hasan,J. Higman,J. Holt, L. Hu, L. Huang,C. Huang,T. Hung,Y. Jin,J. Johnson, S. Johnson,V. Joshi,M. Joshi,P. Justison, S. Kalaga,T. Kim, W. Kim,R. Krishnan,B. Krishnan,K. Anil,M. Kumar, J. Lee,R. Lee,J. Lemon,S.L. Liew, P. Lindo,M. Lingalugari, M. Lipinski, P. Liu, Jinping Liu, S. Lucarini,W. Ma,E. Maciejewski, S. Madisetti, A. Malinowski,J. Mehta, C. Meng,S. Mitra, C. Montgomery,H. Nayfeh,T. Nigam,G. Northrop,K. Onishi, C. Ordonio,M. Ozbek,Rohit Pal,Sanjay Parihar,O. Patterson,E. Ramanathan,I. Ramirez,R. Ranjan, J. Sarad,V. Sardesai, S. Saudari, C. Schiller,Biswanath Senapati, C. Serrau, N. Shah,T. Shen,H. Sheng,J. Shepard, Y. Shi,M.C. Silvestre,D. Singh, Z. Song, J. Sporre,P. Srinivasan, Z. Sun,A. Sutton,R. Sweeney,K. Tabakman, M. Tan, X. Wang,E. Woodard, G. Xu, D. Xu, T. Xuan,Y. Yan, J. Yang,K.B. Yeap, M. Yu,A. Zainuddin, J. Zeng, K. Zhang, M. Zhao, Y. Zhong,Rick Carter,Chung-hsun Lin,Stephan Grunow,C. Child, M. Lagus,Robert Fox,E. Kaste, G. Gomba,Srikanth Samavedam,P. Agnello,D. K. Sohn
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）
引用55浏览0EIWOS引用
55
0
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作者统计

#Papers: 48

#Citation: 612

H-Index: 14

G-Index: 23

Sociability: 6

Diversity: 3

Activity: 0

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