基本信息
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Bio
Daniele Garbin received the joint M.Sc. degree in micro and nanotechnologies for integrated systems from the Politecnico di Torino, Turin, Italy, the Institut Polytechnique de Grenoble, Grenoble, France, and the École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, in 2012. He is currently pursuing the Ph.D. degree with Commissariat à l’énergie atomique et aux énergies alternatives (CEA)–Laboratoire d’électronique et de technologie de l’information (LETI), Grenoble, and Université Grenoble Alpes, Grenoble.
Research Interests
Papers共 76 篇Author StatisticsCo-AuthorSimilar Experts
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Applied Surface Sciencepp.162455, (2025)
Y. Y. Guo,R. Degraeve,T. Ravsher,D. Garbin, P. Roussel, G. S. Kar, E. Bury, D. Linten, I. Verbauwhede
IEEE Transactions on Electron Devicesno. 99 (2025): 1-6
Jangseop Lee, Taras Ravsher,Daniele Garbin,Sergiu Clima,Robin Degraeve,Attilio Belmonte,Hyunsang Hwang, Inhee Lee
IEEE Journal of the Electron Devices Societyno. 99 (2025): 1-1
Koji Sakui,Daniele Garbin, Yoshihisa Iwata, Gautam Gaddemane,Yisuo Li, Yiqun Wan, Kenichi Kanazawa, Eyup Can Demir, Iwao Kunishima,Andrea Fantini, Masakazu Kakumu,Christophe Lorant,Nozomu Harada
2025 IEEE International Memory Workshop (IMW)pp.1-4, (2025)
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)
Z. Hu, G. Wang, Z. Chai, W. Zhang,D. Garbin,R. Degraeve,S. Clima,T. Ravsher,A. Fantini,J. F. Zhang,A. Belmonte,G. S. Kar
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
SOLID-STATE ELECTRONICS (2024)
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Author Statistics
#Papers: 75
#Citation: 1530
H-Index: 22
G-Index: 37
Sociability: 6
Diversity: 2
Activity: 21
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