Dennis D. Rathman

Dennis D. Rathman was born in West Reading, PA, on June 8, 1949. He received the B.A. degree in physics from Kutztown State College, Kutztown, PA, in 1971. He received the M.S. and Ph.D. degrees in physics from Lehigh University, Bethlehem, PA, in 1974 and 1979, respectively. His thesis topic involved photocurrent spectroscopy of thermally grown ${\hbox{SiO}}_{2}$ thin films. In 1979, he joined the Microelectronics Group, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA. He has been involved in a variety of process development programs for silicon devices and IC fabrication. Among these are plasma process development for both etching and deposition, think-film technology development for dielectrics and metallizations, and the epitaxial overgrowth of Si on ${\hbox{SiO}}_{2}$. He has also been engaged in the research and development of novel devices of high-frequency, high-power and biosensor application. in 1999, he joined the Advanced Imaging Technology Group, Lincoln Laboratory, where his primary interest is the development of high-speed imaging devices.