Xiaoling Duan - Key Lab Wide Band Gap Semicond Mat & Devices Educ, Sch Microelect, Xidian Univ

基本信息

Career Trajectory

Bio

Xiaoling Duan received the B.Eng. degree from the Shaanxi University of Science and Technology, Xi’an, China. She is currently pursuing the Ph.D. degree with the School of Microelectronics, Xidian University, Xi’an.

Research Interests

Papers共 49 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network

Xiping Niu,Ling Sang,Xiaoling Duan, Shijie Gu, Peng Zhao, Tao Zhu, Kaixuan Xu, Yawei He,Zheyang Li,Jincheng Zhang,Rui Jin

MICROMACHINES（2025）

Cited0Views0WOSBibtex

Plasma-enhanced Atomic Layer Deposition of AlN Epitaxial GaN on Sapphire

LU Hao,XU Shengrui,HUANG Yong,CHEN Xing, XU Shuang, LIU Xu,WANG Xinhao,GAO Yuan,ZHANG Yachao,DUAN Xiaoling,ZHANG Jincheng,HAO Yue

Journal of Inorganic Materials (2024)

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Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Lu Hao,Xu Shengrui, Huang Yong,Chen Xing, Xu Shuang, Liu Xu,Wang Xinhao,Gao Yuan,Zhang Yachao,Duan Xiaoling,Zhang Jincheng,Hao Yue

JOURNAL OF INORGANIC MATERIALSno. 5 (2024): 547-553

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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High

$\textit{I}_{\text{ON}}$

$\textit{I}_{\text{OFF}}$

Ratio

Peng Wu,Huake Su,Tao Zhang, Heyuan Chen,Shengrui Xu,Xiaoling Duan,Yueguang Lv,Jincheng Zhang,Yue Hao

IEEE Transactions on Electron Devicesno. 99 (2024): 1-4

Cited0Views0EIWOSBibtex

A Normally-Off Tungsten-Gated P-Algan/u-gan Composite-Channel P-Mesfet with Negligible Hysteresis and a High ION/IOFF Ratio

Peng Wu,Huake Su,Tao Zhang, Heyuan Chen,Shengrui Xu,Xiaoling Duan,Yueguang Lv,Jincheng Zhang,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 7 (2024): 4433-4436

Cited0Views0Bibtex

A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High $\textit{I}_{\text{ON}}$/$\textit{I}_{\text{OFF}}$ Ratio

Peng Wu,Huake Su,Tao Zhang, Heyuan Chen,Shengrui Xu,Xiaoling Duan,Yueguang Lv,Jincheng Zhang,Yue Hao

IEEE Transactions on Electron Devicespp.1-4, (2024)

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GaN JBS Diode Device Performance Prediction Method Based on Neural Network

Hao Ma,Xiaoling Duan,Shulong Wang,Shijie Liu,Jincheng Zhang,Yue Hao

MICROMACHINES（2023）

Cited3Views0WOSBibtex

Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm

Shijie Liu,Xiaoling Duan,Shulong Wang,Jincheng Zhang,Yue Hao

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY（2023）

Cited12Views0EIWOSBibtex

Current Transport Mechanism of AlGaN-channel Schottky Barrier Diode with Extremely Low Leakage Current and High Blocking Voltage of 2.55 Kv

Tao Zhang,Yanni Zhang,Ruohan Li,Juan Lu,Huake Su,Shengrui Xu,Kai Su,Xiaoling Duan,Yueguang Lv,Jincheng Zhang,Yue Hao

Applied Physics Letters（2022）

Cited4Views0Bibtex

Corrigendum: “A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings” [Appl. Phys. Express 14, 116504 (2021)]

Jiabo Chen,Xiufeng Song, Zhihong Liu,Xiaoling Duan,Haiyong Wang,Zhaoke Bian,Shenglei Zhao,Jincheng Zhang,Yue Hao

Applied Physics Expressno. 3 (2022)

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