Erwan Morvan - Cea Leti | 人才画像

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200mm GaN/Si RF device research

研究兴趣

论文共 135 篇作者统计合作学者相似作者

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Ft Extraction of HEMT Transistors at Mm-Waves Through EM-simulated De-Embedding Devices

Mohammed Medbouhi,Jose Lugo-Alvarez,Philippe Ferrari,Erwan Morvan

2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (2024)

引用0浏览0EIWOS引用

Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor Featuring 2.2w/mm Psat & 41% PAE @28ghz Using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique

A. Divay, O. Valorge,C. Dubarry, M. Medbouhi,R. Franiatte,D. Mermin, R. Velard,Y. Gobil, F. Morisot,Erwan Morvan,Ismael Charlet,Luca Lucci,J. Lugo,Xavier Garros

Symposium on VLSI Technologypp.1-2, (2024)

引用1浏览0EIWOS引用

Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at Mm-Wave Frequencies

Y. Fouzi,E. Morvan,Y. Gobil, F. Morisot, E. Okada, S. Bollaert,N. Defrance

2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024pp.303-306, (2024)

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CMOS Compatible 200 Mm GaN-on-Si HEMTs for RF Switch Applications with 36 Dbm CW Power Handling and 200 FS RonCoff

L. Lucci,I. Charlet,Y. Gobil, F. Morisot,J. Delprato,S. Ruel, C. Benotmane,F. Laulagnet, P. Dezest, R. Bon, T. Bordignon,A. Clemente, A. Kumar,A. Anotta,T. Billon,B. Duriez,E. Morvan

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts

E. Morvan,Y. Gobil,Fanny Morisot, J. Biscarat,Matthew Charles,J. Lugo,A. Divay, M. Medbouhi,Ismaël Charlet,Julien Delprato,P. Scheiblin,B. Rrustemi,A. Giry,Ayssar Serhan,Simon Ruel,Patricia Pimenta‐Barros,Fabien Laulagnet,S. Minoret,A. Anotta,T. Billon,B. Duriez

openalex（2023）

引用3浏览0EIWOS引用

Detailed Electrical Characterization of 200 Mm CMOS Compatible GaN/Si HEMTs Down to Deep Cryogenic Temperatures

Donghyun Kim,C. Theodorou, A. Chanuel,Y. Gobil,M. Charles,E. Morvan,Jae Woo Lee,M. Mouis,G. Ghibaudo

Solid-State Electronics（2022）

引用3浏览0引用

Breakdown Mechanism of AlGaN/GaN HEMT on 200-Mm Silicon Substrate with Silicon Implant-Assisted Contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu,Matthew Charles,Marianne Coig,Jerome Biscarrat,Francois Aussenac,Nicolas Defrance,Christophe Gaquiere,Fred Gaillard,Erwan Morvan

IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）

引用7浏览0EIWOS引用

Deep Traps Localization in AlGaN/GaN MIS-HEMTs by a Comparative Study Using Capacitance and Current Deep Level Transient Spectroscopies

Mariam El-Khatib,Philippe Ferrandis,Erwan Morvan,Gerard Guillot,Georges Bremond

Journal of Physics Conference Series（2019）

引用2浏览0引用

Gate Length Effect on Trapping Properties in AlGaN/GaN High-Electron-mobility Transistors

Philippe Ferrandis,Mariam El-Khatib,Marie-Anne Jaud,Erwan Morvan,Matthew Charles,Gerard Guillot,Georges Bremond

Semiconductor science and technology（2019）

引用5浏览0引用

Study Of Deep Traps In Algan/Gan High-Electron Mobility Transistors By Electrical Characterization And Simulation

Philippe Ferrandis,Mariam El-Khatib,Marie-Anne Jaud,Erwan Morvan,Matthew Charles,Gérard Guillot,Georges Bremond

JOURNAL OF APPLIED PHYSICS（2019）

引用10浏览0引用

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