Francois Aussenac - Leti, Univ. Grenoble Alpes

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论文共 16 篇作者统计合作学者相似作者

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Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature

Oumaima Daoudi,Emmanuel Nolot, Melanie Dartois, Magali Tessaire,Francois Aussenac,Nicolas Bernier,Nicolas Gauthier,Nevine Rochat,Frederic Fillot,Van-Hoan Le,Hubert Renevier,Gabriele Navarro

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS（2024）

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An Assessment of the Lateral Selective Etching, with HCl, of High Versus Low Ge Content SiGe Layers

Jean-Michel Hartmann,Bernard Previtali,Francois Aussenac, Pattamon Dezest,Olivier Glorieux, Adrien Blot-Saby, Ludovic Couture,Sylvain Barraud

ECS Transactionsno. 2 (2024): 55-73

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An Assessment of the Lateral Selective Etching, with HCl, of High Versus Low Ge Content SiGe Layers

Jean-Michel Hartmann,Bernard Previtali,Francois Aussenac, Pattamon Dezest,Olivier Glorieux, Adrien Blot-Saby, Ludovic Couture,Sylvain Barraud

ECS Meeting Abstractsno. 32 (2024): 2304-2304

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Advanced SiGe:B Raised Sources and Drains for P-Type FD-SOI MOSFETs

Jean-Michel Hartmann,Francois Aussenac,Olivier Glorieux,David Cooper,Sebastien Kerdilès,Zdenek Chalupa, Francois Boulard, Heimanu Niebojewski,Blandine Duriez,Thomas Bordignon, Sebastien Peru,Pawel Michałowski,Richard Daubriac,Fuccio Cristiano

ECS Meeting Abstractsno. 32 (2024): 2337-2337

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Advanced SiGe:B Raised Sources and Drains for P-Type FD-SOI MOSFETs

ECS Transactionsno. 2 (2024): 185-205

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Synergetic FeRAM/OxRAM Memory Array Operation Induced by Oxygen Vacancy Interface Engineering in Si:HfO2 Ferroelectric Films

Laurent Grenouillet,Simon Martin, Julie Laguerre,Justine Barbot,Nicolas Vaxelaire,Pierre-Marie Deleuze,Olivier Renault,Rabah Kies,Catherine Carabasse, Pattamon Dezest,Francois Aussenac, Richard Souil,Olivier Billoint,Elisa Vianello,Wassim Hamouda,Nick Barrett, Fracois Andrieu,Jean Coignus

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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Electrical Assessment of Scaled HfO2-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration

Justine Barbot,Jean Coignus,François Triozon,Catherine Carabasse,Olivier Glorieux,François Aussenac,François Andrieu,Laurent Grenouillet

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials (2022)

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Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Lucas Reganaz,Eduardo Esmanhotto,Nazim Ait Abdelkader,Joel Minguet Lopez,Niccolo Castellani,Quentin Rafhay,Damien Deleruyelle,Laurent Grenouillet,Francois Aussenac,Elisa Vianello,Francois Andrieu,Gabriel Molas

physica status solidi (a)（2022）

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Interplay Between Charge Trapping and Polarization Switching in MFDM Stacks Evidenced by Frequency-Dependent Measurements

Justine Barbot,Jean Coignus,Nicolas Vaxelaire,Catherine Carabasse,Olivier Glorieux,Messaoud Bedjaoui,Francois Aussenac,Francois Andrieu,Francois Triozon,Laurent Grenouillet

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)（2022）

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Breakdown Mechanism of AlGaN/GaN HEMT on 200-Mm Silicon Substrate with Silicon Implant-Assisted Contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu,Matthew Charles,Marianne Coig,Jerome Biscarrat,Francois Aussenac,Nicolas Defrance,Christophe Gaquiere,Fred Gaillard,Erwan Morvan

IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）

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