Frederic Allibert - Chemin de Franque, SOITEC

基本信息

Career Trajectory

Bio

Frederic Allibert received the M.S. degree from the National Institute for Applied Sciences, Lyon, France, in 1997, and the Ph.D. degree from the Grenoble Polytechnic’s Institute, Grenoble, France, in 2003, with a focus on SOI characterization and the study of advanced transistor architectures. He is currently a Senior Scientist with the Soitec’s Advanced Research and Development Group, Bernin, France.

Research Interests

Papers共 115 篇Author StatisticsCo-AuthorSimilar Experts

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Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates

M. Perrose,P. Acosta Alba,S. Reboh,J. Lugo,C. Plantier,P. Cardinael,M. Rack,F. Allibert,F. Milesi,X. Garros,J-P Raskin

2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024（2024）

Cited0Views0EIWOSBibtex

High Q-Factor Low Band SAW Filter Based on High Performance POI Substrate

Xavier Seah,Sylvain Ballandras,Emilie Courjon,Florent Bernard,Alexandre Clairet, Tony Makdissy,Thierry Laroche, Gabrielle Aspar, Eric Michoulier, Saly Ndiaye, Alexandre Raveski, Cedrick Chappaz, Thierry Hilt, Aziz Alami-Idrissi, Philipp Achatz, Laure Rolland, Christophe Didier,Frederic Allibert,Alexis Drouin,Isabelle Huyet

2024 IEEE MTT-S INTERNATIONAL CONFERENCE ON MICROWAVE ACOUSTICS & MECHANICS, IC-MAMpp.125-128, (2024)

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SiC Engineered Substrate: Increasing SiC MOSFETs Current Density from Device to Module Level

Eric Guiot,Frederic Allibert,Juergen Leib,Tom Becker,Alexis Drouin,Walter Schwarzenbach

2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APECpp.210-214, (2024)

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A 150 & 200mm Engineered Substrate Increasing SiC Power Device Current Density Up to 30%

Gonzalo Picun,Eric Guiot,Frederic Allibert,Juergen Leib,Tom Becker,Oleg Rusch,Alexis Drouin,Walter Schwarzenbach

PCIM Asia 2024 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.266-271, (2024)

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High-resistivity with PN Interface Passivation in 22 Nm FD-SOI Technology for Low-Loss Passives at RF and Millimeter-Wave Frequencies

L. Nyssens,M. Rack,M. Nabet,C. Schwan,Z. Zhao,S. Lehmann,T. Herrmann, D. Henke,A. Kondrat,C. Soonekindt,F. Koch, T. Kache, D. P. Kini,O. Zimmerhackl,F. Allibert,C. Aulnette,D. Lederer,J. -P. Raskin

Solid-State Electronics（2023）

Cited3Views0Bibtex

Characterization of Thermally and Electrically Stressed Resonators Built on POI Substrates

A. Drouin,F. Allibert, S. Ledrappier,F. Bernard, S. Ndiaye,E. Courjon

2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)（2023）

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Study of Voltage-Induced Ferroelectric Domain Inversion on POI Based SAW Resonators

F. Allibert,A. Drouin,S. Ballandras, S. Ledrappier,E. Courjon, S. Ndiaye,F. Bernard

2023 IEEE International Ultrasonics Symposium (IUS)pp.1-4, (2023)

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Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiCTM Substrate

Eric Guiot,Frédéric Allibert, Jürgen Leib,Tom Becker,Walter Schwarzenbach,Carsten Hellinger,Tobias Erlbacher,Séverin Rouchier

Materials Science Forum (2023): 201-207

Cited1Views0Bibtex

Buried PN Junctions Impact on the Performances of an Inductor at RF Frequencies

Thibaud Fache,Maxime Moulin,Ismael Charlet,Zdenek Chalupa,Jean-Pierre Raskin,Frederic Allibert,Christophe Plantier,Fred Gaillard,Louis Hutin

2023 IEEE 23RD TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMSpp.28-30, (2023)

Cited1Views0EIWOSBibtex

Improved Power Cycling Reliability through the use of SmartSiC TM) Engineered Substrate for Power Devices

Eric Guiot,Frederic Allibert,Juergen Leib,Tom Becker,Tobias Erlbacher

PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-5, (2023)

Cited1Views0EIWOSBibtex

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