Geert Eneman

Geert Eneman received the B.S. and M.S. degrees in electrical engineering and the Ph.D. degree on the topic of “Design, fabrication, and characterization of strained silicon transistors” from the Katholieke Universiteit Leuven, Leuven, Belgium, in 1999, 2002, and 2006, respectively. His Ph.D. work was done at the IMEC Leuven. He has been with imec since 2011. His current research interests include characterization of Ge and III-V MOSFETs, and modeling of alternative device structures.