H. Arimura - Semiconductor Technology and Systems, IMEC

基本信息

Career Trajectory

Bio

Hiroaki Arimura received the M.S. and Ph.D. degrees in material science and engineering from Osaka University, Suita, Japan, in 2009 and 2011, respectively. In 2011, he joined the Reliability Group, imec, KU Leuven, Leuven, Belgium, as a Post-Doctoral Researcher, where he studied negative bias temperature instability of sub-1-nm EOT Si-MOSFETs. In 2013, he joined the Logic Device Group, imec, where he focuses on Ge channel devices.

Research Interests

Papers共 143 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor

R. Sarkar,R. Ritzenthaler,J. Everaert,P. Eyben,K. Sankaran,C. Porret, P. Gupta,J. Ganguly,H. Arimura,J. Geypen,E. Capogreco, S. Roh,V. Machkaoutsan,L. PB. Lima, M-S. Kim,A. Spessot,N. Horiguchi

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Impact of Work Function Metal Stacks on the Performance and Reliability of Multi- V Th RMG CMOS Technology

J. Franco,H. Arimura,S. Brus,E. Dentoni Litta,K. Croes,N. Horiguchi,B. Kaczer

Solid-State Electronics (2024): 108929-108929

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

R. Asanovski,H. Arimura,J. -F de Marneffe,P. Palestri,N. Horiguchi,B. Kaczer,L. Selmi,J. Franco

IEEE Transactions on Electron Devicespp.1-7, (2024)

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Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics

J. P. Bastos,B. J. O'Sullivan,Y. Higashi,A. Chasin,J. Franco,H. Arimura,J. Ganguly,E. Capogreco,A. Spessot,N. Horiguchi

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024（2024）

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(Invited) Metrology along the Gate-All-Around Logic Roadmap: from Nanosheet to Complementary Field-Effect Transistors

Janusz Bogdanowicz,Mohamed Saib,Matteo Beggiato,Gian Lorusso, Vincent Brissonneau,Emmanuel Dupuy,Roger Loo,Yosuke Shimura, Anjani Akula,Hiroaki Arimura,Pallavi Puttarame Gowda,BT Chan, Daisy Zhou,Hans Mertens,Lucas P. B. Lima,Naoto Horiguchi,Serge Biesemans,Joey Hung,Igor Turovets, Sun Wei,Philipp Hoenicke,Richard Ciesielski,Anne-Laure Charley,Philippe Leray

ECS Meeting Abstractsno. 32 (2024): 2302-2302

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Low Thermal Budget Multi-Vth RMG Solution with Excellent TDDB and BTI Reliability by Combining Hydrogen Radical IL Treatment, N-Dipole-first Shifter and Low-Temperature HK PDA

J. Franco,H. Arimura,A. Vici,J. F. De Marneffe, G. Molinaro,J. Ganguly, L. Lukose,R. Degraeve,B. Kaczer,H. Mertens, M.-S. Kim,N. Horiguchi

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet Nfets Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration

Hiroaki Arimura,Hans Mertens,Jacopo Franco, L. Lukose, W. Maqsood,S. Brus,Thomas Chiarella, A. Impagnatiello, S. Homkar, V. K. Mootheri, C. Yin,G. Alessio Verni,M. Givens,L. Petersen Barbosa Lima,S. Biesemans,N. Horiguchi

Symposium on VLSI Technology（2024）

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DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based Pwfm for Sub-10Nm DRAM

J. Ganguly,Hiroaki Arimura,Romain Ritzenthaler, H. Bana,J. W. Maes, J. G. Lai,S. Brus, W. Maqsood,R. Sarkar, B. Kannan,Elena Capogreco,V. Machkaoutsan, S. Yoon,Alessio Spessot,M. Givens,Naoto Horiguchi

Symposium on VLSI Technologypp.1-2, (2024)

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Direct Extraction of Contact and S/D Epi Access Resistance Components on 45nm Gate Pitch NS-Based N-Fet Devices for the 2nm Node

P. Eyben, A. Pondini,A. De Keersgieter,H. Arimura,H. Mertens,T. Chiarella,C. Porret,E. Rosseel,R. Sarkar,M. Hosseini, X. Zhou,L. Wouters,P. Matagne,J. Mitard,N. Horiguchi

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

T. Chiarella,P. Matagne,H. Mertens,M. Hosseini, X. Zhou,P. Eyben,H. Arimura,A. Gupta,O. Richard,C. Drijbooms,R. Caluwaerts,N. Horiguchi,J. Mitard

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.16-18, (2024)

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