Jan Van Houdt

基本信息

Career Trajectory

Bio

He has published 300 papers, wrote 2 book chapters and accumulated more than 250 conference contributions (including 40+ invitations and 5 best paper awards). He has filed more than 80 patents worldwide.
Specialties: Memory technology (business, systems, design, technology and physics perspective) and steep slope transistor technology. Teaching and thesis advising, Consultancy.

Research Interests

Papers共 354 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-destructive Read

Shankha Mukherjee,Jasper Bizindavyi,Mihaela I. Popovici,Sergiu Clima,Yang Xiang, Gourab De,Attilio Belmonte,Gouri Sankar Kar,Francky Catthoor,Shimeng Yu,Valeri V. Afanas’ev,Jan Van Houdt

IEEE Electron Device Lettersno. 99 (2025): 1-1

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Switching of a Magnetic Tunnel Junction by Voltage-Controlled Magnetic Anisotropy

D. Favaro, W. Kim, S. Ranjbar, M. Gama Monteiro,R. Carpenter, S. Rao,S. Van Beek, L. Labbate,J. Van Houdt, K. Temst,S. Couet

PHYSICAL REVIEW APPLIEDno. 1 (2025)

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Understanding the Slow Erase Operation in IGZO-channel FeFETs: the Role of Positive Charge Generation Kinetics

Zhuo Chen,Nicolò Ronchi,Roman Izmailov,Hongwei Tang,Mihaela I. Popovici,Harold Dekkers, Alexandru Pavel,Geert Van den bosch,Maarten Rosmeulen,Valeri V. Afanas’ev,Jan Van Houdt

IEEE Journal of the Electron Devices Societyno. 99 (2025): 1-1

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Investigation of the Role of In-Plane Stress Behavior on Ferroelectric Properties of Scaled-Up Hafnium Zirconium Oxide Superlattices

Gourab De, Mihaela Ioana Popovici,Shankha Mukherjee, Dae Seon Kwon, Federica Luciano, Tony Murphy,Gouri Sankar Kar,Annelies Delabie,Jan Van Houdt

Nanoscaleno. 16 (2025): 10006-10012

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Yttrium Doped Hf0.5Zr0.5O2 Based Ferroelectric Capacitor Exhibiting Fatigue Free (>1012 Cycles), Long Retention, and Imprint Immune Performance at 4 K

A. Agarwal, A. M. Walke, N. Ronchi, M. I. Popovici, W. C. Y. Ma, C. J. Su, K. H. Kao,Jan Van Houdt

IEEE Electron Device Lettersno. 99 (2025): 1-1

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First Demonstration of 3D Stacked FeFET Memory Devices with Vertical IGZO Channel-Last Process for Dense Non-Volatile Memory

Roman Izmailov,Nicolò Ronchi, Jie Li,Mihaela Ioana Popovici,Kostantine Katcko,Zhuo Chen,Laurent Breuil,Nina Bazzazian,Kaustuv Banerjee, Iuliana Rachita,Geert Van den bosch,Maarten Rosmeulen,Jan Van Houdt

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density

Taras Ravsher,Daniele Garbin,Andrea Fantini,Robin Degraeve,Sergiu Clima,Gabriele Luca Donadio,Shreya Kundu,Hubert Hody,Wouter Devulder,Goedele Potoms, Tobias Peissker,Laura Nyns,Jan Van Houdt,Valeri Afanas'ev,Attilio Belmonte,Gouri Sankar Kar

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS（2024）

Cited6Views0Bibtex

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory

Taras Ravsher,Robin Degraeve,Daniele Garbin,Sergiu Clima,Andrea Fantini,Gabriele Donadio,Shreya Kundu,Wouter Devulder,Hubert Hody,Goedele Potoms,Jan Van Houdt,Valeri Afanas'ev,Attilio Belmonte,Gouri Kar

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

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Characterization of Trap Density in Indium-Gallium-Zinc-Oxide Thin Films by Admittance Measurements in Multi-Finger MOS Structures

Hongwei Tang,Attilio Belmonte,Dennis Lin,Valeri Afanas'ev,Patrick Verdonck,Adrian Chasin,Harold Dekkers,Romain Delhougne,Jan Van Houdt,Gouri Sankar Kar

Solid-State Electronics (2024): 108866-108866

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Transition-state-theory-based Interpretation of Landau Double Well Potential for Ferroelectrics

Md Nur K. Alam,S. Clima,B. Kaczer, Ph. Roussel,B. Truijen, L. - A. Ragnarsson,N. Horiguchi,M. Heyns,J. Van Houdt

arXiv (Cornell University) (2024)

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Papers共 354 篇Author StatisticsCo-AuthorSimilar Experts