WeChat Mini Program
Old Version Features
Research Interests

Papers共 40 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices
Joel Kanyandekwe,Jean-Michel Hartmann,Justine Lespiaux,Tanguy Marion, Lazhar Saidi, Valérie Lapras,Alice Bond, Fabien Bringuier,Jérôme Richy,Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand,Christophe Licitra,Remi Coquand, Alexis Royer,Tristan Dewolf,Haidar Al Dujaili, Andrea Lassenberger,Olivier Glorieux
ECS Transactionsno. 2 (2024): 253-270
Cited0Views0Bibtex
0
0
Selective Epitaxial Growth of SiGe(:B) for Advanced P-Type Fd-SOI
Justine Lespiaux,Joël Kanyandekwe,Tanguy Marion, Lazhar Saidi, Valérie Lapras,Alice Bond, Fabien Bringuier,Jérôme Richy, Alan Thouvard, Tim Biet,Emmanuel Nolot, Ludovic Couture,Laurent Brunet,Philippe Rodriguez, Eva Dos Reis,Nicolas Gauthier, Adrien Blot-Saby,Jean-Michel Hartmann
ECS Transactionsno. 2 (2024): 271-295
Cited0Views0Bibtex
0
0
Selective Epitaxial Growth of SiGe(:B) for Advanced P-Type Fd-SOI
Justine Lespiaux,Joël Kanyandekwe,Tanguy Marion, Lazhar Saidi, Valérie Lapras,Alice Bond, Fabien Bringuier,Jérôme Richy, Alan Thouvard, Tim Biet,Emmanuel Nolot, Ludovic Couture,Laurent Brunet,Philippe Rodriguez, Eva Dos Reis,Nicolas Gauthier, Adrien Blot-Saby,Jean-Michel Hartmann
ECS Meeting Abstractsno. 32 (2024): 2356-2356
Cited0Views0Bibtex
0
0
Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices
Joel Kanyandekwe,Jean-Michel Hartmann,Justine Lespiaux,Tanguy Marion, Lazhar Saidi, Valérie Lapras,Alice Bond, Fabien Bringuier,Jérôme Richy,Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand,Christophe Licitra,Remi Coquand, Alexis Royer,Tristan Dewolf,Haidar Al Dujaili, Andrea Lassenberger,Olivier Glorieux
ECS Meeting Abstractsno. 32 (2024): 2355-2355
Cited0Views0Bibtex
0
0
Atomic Layer Deposition of HfAlOx for High-k Gate Dielectrics
Messaoud Bedjaoui, Mélanie Dartois,Vincent Jousseaume,Emmanuel Nolot,Yann Mazel,Jérôme Richy, Céline Bout
ECS Meeting Abstractsno. 29 (2023): 1439-1439
Cited0Views0Bibtex
0
0
Load More
Author Statistics

#Papers: 40

#Citation: 80

H-Index: 5

G-Index: 6

Sociability: 5

Diversity: 1

Activity: 3

  • 合作者
  • 学生
  • 导师
No result temporarily, you can search similar Scholar with the same research interest
Data Disclaimer
The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn