Jiahui Yuan

Jiahui Yuan (S'06–M'10) received the B.Eng. degree in electronic engineering from Tsinghua University, Beijing, China, and the M.S. and Ph.D. degrees in electrical engineering from Georgia Institute of Technology, Atlanta. In the summer of 2008, he interned in IBM Semiconductor R&D Center, East Fishkill, NY, working on 32-nm complementary metal–oxide–semiconductor silicon-on-insulator technology. In 2010, he joined SanDisk Corporation, Milpitas, CA, where he is currently a Senior Device Engineer working on 24-nm Flash memory technology. His research interests include the cryogenic operation of SiGe heterojunction bipolar transistors for space explorations, the scaling of SiGe heterojunction bipolar transistors for submillimeter-wave and terahertz applications, and technology computer-aided design simulations. Dr. Yuan was a recipient of an IEEE Electron Devices Society Ph.D. Student Fellowship in 2008.