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论文共 8 篇作者统计合作学者相似作者

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Generalization of Fick's Law and Derivation of Interface Segregation Parameters Using Microscopic Atomic Movements
Chihak Ahn,Joohyun Jeon, Seungmin Lee,Woosung Choi,Dae Sin Kim,Nick E.B. Cowern
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
Atomistic Multiscale Simulation-Based Extraction of Design Margins in Advanced Transistor Architectures
Jun Jung, Geunsang Yoo,Alexander Schmidt, Wonyup Song,Hiroyuki Kubotera, Muralikrishna Raju, Byounghak Lee,Woosung Choi,Anthony Payet, Hiroo Koshimoto,Yasuyuki Kayama, Beom Seo Kim, Chungyeon Lee,Jamin Koo,Joohyun Jeon, Seungmin Lee,Dae Sin Kim
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.01-04, (2024)
引用0浏览0EIWOS引用
0
0
Full Chip Stress Model for Defect Formation Risk Analysis in Multilayer Structures
Kyungmi Yeom, Geunsang Yoo,Alexander Schmidt,Anthony Payet,Joohyun Jeon, Seungmin Lee,Yutaka Nishizawa, Masaru Uchiyama,Yasuyuki Kayama,Chihak Ahn,Woosung Choi,Dae Sin Kim
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
Change of Electrical Characteristics of a P-Type MOSFET Via Hydrogen Effect on Boron Redistribution
Youngrok Kim,Chihak Ahn,Alexander Schmidt,Joohyun Jeon,Sae-Jin Kim, Hakseon Kim,Hyunjae Kim,Hyeyoung Kwon, Yero Lee,Sung Jin Kim,Dongjin Lee,Jaeduk Lee,Dae Sin Kim
International Conference on Simulation of Semiconductor Processes and Devicespp.181-184, (2023)
引用0浏览0EIWOS引用
0
0
Development of the Reactive Force Field and Silicon Dry/wet Oxidation Process Modeling
Junichi Noaki, Satoshi Numazawa,Joohyun Jeon, Shuntaro Kochi
NPJ COMPUTATIONAL MATERIALSno. 1 (2023)
引用4浏览0WOSNATURE引用
4
0
作者统计

#Papers: 8

#Citation: 4

H-Index: 1

G-Index: 1

Sociability: 3

Diversity: 1

Activity: 1

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