Dr. Moodera’s many years of research in the area of spin polarized tunneling led to the breakthrough in observing tunnel magnetoresistance (TMR) at room temperature in magnetic tunnel junctions (1995). This resulted in a huge surge in this area of research, currently one of the most active areas. TMR effect is used in all ultra-high density magnetic data storage since about 2004, as well as for the development of non-volatile magnetic random access memory (MRAM).