Matthew R. Wordeman

Matthew Wordeman (SM’78) received the D.Eng.Sc. degree from Columbia University, New York, NY, USA, in 1986. He joined IBM T. J. Watson Research Center in 1978, where he worked on a study of ionizing radiation induced soft errors in dynamic RAMS as well as the development of polycide technologies for DRAM applications. After receiving the graduate degree in 1986, he managed a group at IBM responsible for research in MOSFET device design. Investigations of miniaturized MOSFETs led to the design and fabrication of 70-nm channel length MOSFETs which clearly demonstrated the effects of velocity overshoot in short channel MOSFETs. He became manager of IBM Research Division's DRAM Design group in 1990 where his group studied advanced memory architectures. In 1992 he joined the IBM Microelectronics Division in a 256 Mb DRAM development project as a part of the product design department. In 2004, he returned to the research division and currently is interested in exploratory interconnects and the design of advanced of memories. Dr. Wordeman received the 1997 Cledo Brunetti IEEE field award for his work on semiconductor miniaturization.