Matthew Charles - Atomic Energy and Alternative Energies Commission

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Matthew Charles currently works at the Centre d'Etudes de Grenoble, Atomic Energy and Alternative Energies Commission. Matthew does research in Materials Physics, Materials Science and Solid State Physics.

研究兴趣

论文共 116 篇作者统计合作学者相似作者

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Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical P-N Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments

Mohammed El Amrani,Julien Buckley,Daniel Alquier, Philippe Godignon,Matthew Charles

Electronicsno. 6 (2025): 1188

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Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN P-N Diodes Grown with Selective Area Growth

Mohammed El Amrani, Thomas Kaltsounis, David Plaza Arguello, Stephane Moreau, Hala El Rammouz,Matthew Charles,Julien Buckley,Daniel Alquier

2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2025)

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Effect of P-Ingan Cap Layer on Low-Resistance Contact to P-Gan: Carrier Transport Mechanism and Barrier Height Characteristics

Mohit Kumar, Laurent Xu, Timothee Labau,Jerome Biscarrat,Simona Torrengo,Matthew Charles,Christophe Lecouvey,Aurelien Olivier, Joelle Zgheib,Rene Escoffier,Julien Buckley

CRYSTALSno. 1 (2025)

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Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Mohammed El Amrani,Julien Buckley,Thomas Kaltsounis, David Plaza Arguello,Hala El Rammouz,Daniel Alquier,Matthew Charles

Crystalsno. 6 (2024): 553-553

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Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si P‐n Diode on 200 Mm‐diameter Wafers

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello,Hala El Rammouz,Vishwajeet Maurya,Matthieu Lafossas,Simona Torrengo,Helge Haas,Laurent Mendizabal,Alain Gueugnot,Denis Mariolle,Thomas Jalabert,Julien Buckley,Yvon Cordier,Matthew Charles

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEno. 21 (2024)

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High Breakdown Voltages on Pseudo-Vertical P-N Diodes by Selective Area Growth of GaN on Silicon

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello,Hala El Rammouz,Matthieu Lafossas,Simona Torrengo,Laurent Mendizabal,Alain Gueugnot,Denis Mariolle,Thomas Jalabert,Julien Buckley,Yvon Cordier,Matthew Charles

JOURNAL OF APPLIED PHYSICSno. 17 (2024)

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GaN/InGaN LED Sidewall Defects Analysis by Cathodoluminescence and Photosensitive Kelvin Probe Force Microscopy

Palmerina Gonzalez-Izquierdo,Nevine Rochat,Konrad Sakowski,Davide Zoccarato,Matthew Charles,Lukasz Borowik

ACS Photonics（2024）

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Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

Vishwajeet Maurya,Daniel Alquier, Mohammed El Amrani,Matthew Charles,Julien Buckley

MICROMACHINESno. 6 (2024)

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Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

Valentin Ackermann,Blend Mohamad,Hala El Rammouz,Vishwajeet Maurya,Eric Frayssinet,Yvon Cordier,Matthew Charles,Gauthier Lefevre,Julien Buckley,Bassem Salem

Electronicsno. 12 (2024): 2350-2350

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Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based Μleds

Nabil Labchir,Saber Hammami,Kilian Baril,Maya Wehbe,Sebastien Labau,Jerome Reche,Camille Petit-Etienne,Marie Panabiere,Pierre-Marie Coulon,Blandine Alloing,Daniel Pino Munoz,Jesus Zuniga-Perez,Patrice Gergaud,Matthew Charles,Cecile Gourgon

Advanced Materials Technologies (2024)

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