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论文共 180 篇作者统计合作学者相似作者

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The Critical Role of 2D TMD Interfacial Layers for Pfet Performance
T.D. Ngo, X. Wu,C.J. Dorow, R.K. Grubbs, L. Pinotti,D. Cott,K. Banerjee, H. Medina Silva,I. Hoflijk,A. Vanleenhove,I. Vaesen,T. Conard, S. Ghosh,O. Richard, F.C. Mascarenhas, L. Mana,D. Vanhaeren,T. Nuytten, F. Xi,K. Maxey, A. Kozhakhmetov,N. Arefin, S. Pasko, S. Krotkus, J. Mischke,S. El Kazzi,M. Metz,K.P. O'Brien,U. Avci, C.J. Lockhart De La Rosa,G. Sankar Kar,B. Govoreanu
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
Subtractive Ruthenium Interconnects with Airgap
Ananya Dutta, Akshit Peer,Christopher Jezewski, Saima Siddiqui, Ian Jenkins, Emmanuel Khora, Gauri Auluck, YuWen Huang, Felipe Bedoya,Nafees Kabir, Supriya Mocherla, Puja Rani Saha, Leah Shoer, Kyle Chan, Akhilesh Tanneeru, Jay Gupta, Vijay Bharamaiah Jeevendrakumar, David Collins, Syam Madhusoodhanan, Jeff Bielefeld, William Brezinski, Remi Fayad, Supanee Sukrittanon, Sudipto Naskar, Sreenivas Kosaraju,Nityan Nair, Gurpreet Singh, Joseph D Silva, Cliff Engel, Noel Franco,Brian Krist, Jimmy Wang,Matthew Metz,Mauro Kobrinsky
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
Gate Oxide Module Development for Scaled GAA 2D FETs Enabling SS<75mV/d and Record Idmax>900μA/μm at Lg<50nm
W. Mortelmans, P. Buragohain, A. Kitamura,C.J. Dorow,C. Rogan, L. Siddiqui,R. Ramamurthy, J. Lux, T. Zhong, S. Harlson, E. Gillispie, T. Wilson, R. Toku,A. Oni,A. Penumatcha, M. Kavrik, M. Jaikissoon,K. Maxey, A. Kozhakhmetov, C-Y. Cheng, C-C. Lin, S. Lee, A. Vyatskikh,N. Arefin, D. Kencke, J. Kevek,T. Tronic,M. Metz,S.B. Clendenning,K.P. O'Brien,U. Avci
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
引用0浏览0EIWOS引用
0
0
Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length
W. Mortelmans, P. Buragohain,C. Rogan, A. Kitamura,C. J. Dorow,K. P. O'Brien,R. Ramamurthy, J. Lux, T. Zhong, S. Harlson, E. Gillispie, T. Wilson,Adedapo Oni,A. Penumatcha, M. S. Kavrik,K. Maxey, A. Kozhakhmetov,C. C. Lin, S. Lee, A. Vyatskikh,N. Arefin,P. Fischer, J. Kevek,T. Tronic,M. Metz,S. B. Clendenning,U. Avci
Symposium on VLSI Technologypp.1-2, (2024)
引用0浏览0EIWOS引用
0
0
Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS
S.-C. Chang, C. Neumann, B. Granados Alpizar, S. Atanasov,J. Peck,N. Kabir, Y.-C. Liao,S. Shivaraman, Wriddhi Chakraborty,N. Haratipour,I-Cheng Tung, V. Nikitin, G. Allen,T. Hoff,A. Oni,T. Tronic, A. Roy, H. Li,F. Hamzaoglu,M. Metz, I. Young,J. Kavalieros,U. Avci
Symposium on VLSI Technologypp.1-2, (2024)
引用0浏览0EIWOS引用
0
0
High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling
A. Penumatcha,K. P. O’Brien,K. Maxey, W. Mortelmans, R. Steinhardt, S. Dutta,C. J. Dorow, C. H. Naylor A., Kitamura, T. Zhong,T. Tronic, P. Buragohain,C. Rogan,C-C. Lin, M. Kavrik, J. Lux,A. Oni, A. Vyatskikh,S. Lee,N. Arefin,P. Fischer, S. Clenndenning,M. Radosavljevic,M. Metz,U. Avci
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
引用3浏览0EIWOS引用
3
0
2D Materials in the BEOL
C. H. Naylor,Kirby Maxey,C. Jezewski,K. P. O'Brien,A. V. Penumatcha,M. S. Kavrik,B. Agrawal, C. V. Littlefield, J. Lux,B. Barley,Justin R. Weber,A. Sen Gupta,C. J. Dorow,N. Arefin,S. King,R. Chebiam, J. Plombon,S. B. Clendenning,U. E. Avci,Mauro J. Kobrinsky,M. Metz
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)
引用7浏览0EIWOS引用
7
0
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作者统计

#Papers: 180

#Citation: 8842

H-Index: 49

G-Index: 85

Sociability: 6

Diversity: 1

Activity: 2

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