M. B. Goykhman

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Mikhail B. Goykhman was born on April, 15, 1974, in Nizhny Novgorod (formerly Gorky), USSR. In 1997 he received M.S degree in physics from the University of Nizhny Novgorod. Since 1997, he has been with the High Power Microwave Sources laboratory of Institute of Applied Physics (IAP), Russian Academy of Science, Nizhny Novgorod, where he is currently pursuing the Ph.D. degree (to be completed next year). His research interests are in high power microwave electronics, applied electrodynamics.

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