Muhammad Usman

Ion implantation / irradiation of materials, particularly wide bandgap semiconductors (4H-SiC, GaN, ZnO), is my main area of interest. High-k dielectrics for device passivation purpose and the investigation of their interface with semiconductors using synchrotron based techniques and electrical measurements is another focus of my research. In addition, TCAD modeling of electronic devices is included in my research interests, where the primary focus is on SiC-based devices.