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Research Interests

Papers共 601 篇Author StatisticsCo-AuthorSimilar Experts

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Ultralow Voltage Operation of P- and N-Fets Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang, Zehao Lin,Pukun Tan, Jian-Yu Lin,Wenzhuo Wu,Haiyan Wang,Peide D Ye
Advanced materials (Deerfield Beach, Fla)no. 20 (2025): e2418142-e2418142
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Exploration of Interplay Between Charge Trapping Dynamics and Polarization Switching in Α-In2se3 Ferroelectric Semiconductor FETs
Minah Park, Jaewook Yoo, Seohyeon Park, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Sojin Jung, Gang Qiu, Sungjune Park, TaeWan Kim,Peide D. Ye, Hagyoul Bae
IEEE Electron Device Lettersno. 99 (2025): 1-1
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Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration
Chun-An Shih, Mir Md Fahimul Islam, Sumi Lee,Peide D. Ye,Muhammad Ashraful Alam
2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2025)
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Analyzing the Contact-Doping Effect in In2O3 FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors
Jian-Yu Lin,Chang Niu, Zehao Lin, Sumi Lee, Taehyun Kim, Jungho Lee, Chang Liu, Juanjuan Lu,Haiyan Wang,Muhammad Ashraful Alam, Changwook Jeong,Peide D. Ye
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
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Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States
Wei Pan, D Bruce Burckel,Catalin D Spataru, Keshab R Sapkota,Aaron J Muhowski, Samuel D Hawkins,John F Klem, Layla S Smith, Doyle A Temple, Zachery A Enderson, Zhigang Jiang,Komalavalli Thirunavukkuarasu,Li Xiang,Mykhaylo Ozerov,Dmitry Smirnov, Chang Niu,Peide D Ye, Praveen Pai,Fan Zhang
Nano letters (2025)
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Quantum Geometry and the Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media
Pierpaolo Fontana,Victor Velasco, Chang Niu,Peide D. Ye, Pedro V. Lopes, Kaio E. M. de Souza, Marcus V. O. Moutinho,Caio Lewenkopf,Marcello B. Silva Neto
arxiv（2025）
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Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (Hzo)-Based MFIM
Tae Ryong Kim, Revanth Koduru, Zehao Lin,Peide. D. Ye, Sumeet Kumar Gupta
arxiv（2024）
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Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory
Zehao Lin,Zhuocheng Zhang,Chang Niu,Hongyi Dou, Ke Xu, Mir Md Fahimul Islam,Jian-Yu Lin,Changhyuck Sung, Minji Hong,Daewon Ha,Haiyan Wang,Muhammad Ashraful Alam,Peide D. Ye
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 12 (2024): 7984-7991
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First Demonstration of BEOL Wafer-Scale All-ALD Channel CFETs Using IGZO and Te for Monolithic 3D Integration
Chang Niu,Pukun Tan,Jian-Yu Lin, Linjia Long,Zehao Lin, Yizhi Zhang,Haiyan Wang, Glen D. Wilk,Peide D. Ye
2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)
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Author Statistics

#Papers: 601

#Citation: 44085

H-Index: 83

G-Index: 200

Sociability: 7

Diversity: 3

Activity: 84

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