Pouya Hashemi (M’05–SM’17) received the Ph.D. degree (Hons.) from the Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT) in 2010 and the B.Sc. and M.Sc. degrees (Highest Hons.) in electrical engineering from the University of Tehran in 2003 and 2005, respectively. He is currently a Research Staff Member with IBM Research Center, Yorktown Heights, NY, USA, with hands on exploratory logic devices (high mobility strained SiGe, Ge, and III-V FinFETs/GAA FETs) for advanced technology nodes, unconventional high-speed transistors (Lateral BJTs), as well as memory devices (STT-MRAM). His work has led to over 100 peer-reviewed journals and conferences, several invited talks such as IEDM and VLSI Technology Symposium and near 250 issued U.S. patents. He was a recipient of the 2014 IEEE George E. Smith Award in 2015, the IBM Ph.D. Fellowship Award in 2008, the TSMC Outstanding Research Award/Commendation in 2010, the Jin-Au Kong Award (Honorable Mention) for best MIT Electrical Engineering Ph.D. Thesis in 2011, and the MIT Microsystems Technology Laboratories Doctoral Dissertation Seminar Winner in 2011. He is an IBM Master Inventor and a Senior Member of the IEEE Electron Device Society.