Pragya R. Shrestha - Semicond. & Dimensional Metrol. Div., NIST;c;Semicond. & Dimensional Metrol. Div., NIST

基本信息

Career Trajectory

Bio

Pragya R. Shrestha received the Ph.D. degree from Old Dominion University, VA, USA in 2013. She performed her Ph.D. Research with the National Institute of Standards and Technology on electrical characterization of RRAM, where she is with Theiss Research.

Research Interests

Papers共 88 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory

Pragya R. Shrestha,Alexander Zaslavsky, Valery Ortiz Jimenez, Jason P. Campbell,Curt A. Richter

IEEE Journal of the Electron Devices Societyno. 99 (2025): 1-1

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Non-Resonant Phase Sensitive Approach for Time Resolved Microwave Conductivity in Photoactive Thin Films

Jasleen K. Bindra,Pragya R. Shrestha,Sebastian Engmann,Chad D. Cruz,David J. Gundlach,Emily G. Bittle,Jason P. Campbell

MATERIALS TODAY ADVANCES (2024)

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A 0.16–3.7ghz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K Using 16nm FinFET Technology for Qubit Readout

Runzhou Chen,Hamdi Mani,Phil Marsh,Richard Al Hadi,Pragya Shrestha,Jason P. Campbell,Christopher Chen,Hao-Yu Chien,Mau-Chung Frank Chang

Device Research Conference（2024）

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Unlocking Circuits for Quantum with Open Source Silicon: A First Look at Measured Open Source Silicon Results at 4 K

Anhang Li, Tuohang Zeng, Lei Zhang,Joseph Riem,Gina C. Adam, David L. Fleischer,Alex Zaslavsky,William R. Patterson,Tim Ansell,Akin Akturk,Brian Hoskins,Pragya R. Shrestha,Mehdi Saligane

IEEE Solid-State Circuits Magazine（2024）

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A 4-Mw 2.2–6.9 GHz LNA in 16 Nm FinFET Technology for Cryogenic Applications

Runzhou Chen,Hamdi Mani,Phil Marsh,Richard Al Hadi,Pragya Shrestha,Jason Campbell,Christopher Chen,Hao-Yu Chien,Kosmas Galatsis,Mau-Chung Frank Chang

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERSno. 12 (2024): 1351-1354

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A Fully Integrated, Automatically Generated DC–DC Converter Maintaining >75% Efficiency from 398 K Down to 23 K Across Wide Load Ranges in 12-Nm FinFET

Anhang Li,Jeongsup Lee,Prashansa Mukim,Brian D. Hoskins,Pragya Shrestha,David Wentzloff,David Blaauw,Dennis Sylvester,Mehdi Saligane

IEEE Solid-State Circuits Letters (2024): 42-45

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Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

Prashansa Mukim,Pragya R. Shrestha,Advait Madhavan,Nitin Prasad,Jason Campbell,Forrest D. Brewer,Mark D. Stiles,Jabez J. McClelland

IEEE ELECTRON DEVICE LETTERS（2023）

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Ultrafast ID – VG Technique for Reliable Cryogenic Device Characterization

Pragya R. R. Shrestha,Akin Akturk,Brian Hoskins,Advait Madhavan,Jason P. P. Campbell

IEEE Journal of the Electron Devices Society（2023）

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Electrical Properties of Ga2O3 Schottky Barrier Diodes with and Without Mesa Structure

Minyeong Kim,Nolan Hendricks,Neil Moser,Pragya Shrestha,Sujitra Pookpanratana,Sang-Mo Koo,Qiliang Li

ECS Meeting Abstractsno. 32 (2023): 1840-1840

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Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry

Jasleen K. Bindra,Pragya R. Shrestha,Sebastian Engmann,Chad Cruz,Lea Nienhaus,Emily G. Bittle,Jason P. Campbell

The Journal of Physical Chemistry C（2023）

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