Ruggero Anzalone

R. Anzalone was born in Catania, Italy, in 1979. He received the B.S. degree in physics in July 2005 and the Ph.D. degree in material science in March 2010 from the University of Catania, Catania. His Ph.D. work was focused on the silicon carbide (3C–SiC) growth process and its applications, and his Ph.D. dissertation was focused on the heteroepitaxial 3C–SiC layer on silicon substrate for MEMS applications. In October 2005, he joined the Frascati Research Center, Italian National Agency for New Technologies, Energy and the Environment (ENEA), Rome, Italy, where he worked on inertial fusion confinement. Since 2011, he has held a postdoctoral post at the Institute of Microelectronics and Microsystems, National Research Council (CNR–IMM), Catania. His research interests include the development of heteroepitaxial 3C–SiC thin films and the study of SiC mechanical proprieties for MEMS and sensor applications.