Reza Ghandi was born in Tehran, Iran, in 1982. He received the B.Sc. degree in electrical engineering from the University of Tehran, Tehran, and the M.Sc. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2007 and 2011, respectively. His doctoral work was focused on fabrication technology for efficient high-power SiC BJTs. In 2011, he joined the Semiconductor Technology Laboratory, GE Global Research, Niskayuna, NY, and is currently working on the development of high-voltage SiC switches and integrated circuits for high-power and high-temperature applications.