Ryan Going

Ryan W. Going (S’10–M’15) received the B.S. degrees in electrical engineering and in applied mathematics from North Carolina State University, Raleigh, NC, USA, in 2009, the M.Phil. degree in micro and nanotechnology enterprise at the University of Cambridge, Cambridge, U.K., in 2012, and the Ph.D. degree in electrical engineering from the University of California at Berkeley, Berkeley, CA, USA, in 2015. In 2014, he was an Intern with the Silicon Photonics Solutions Group, Intel Corporation. Since 2015, he has been a Senior Hardware Development Engineer with the Optical Integrated Circuits Group, Infinera Corporation, Sunnyvale, CA, USA. He has authored or co-authored over 20 peer-reviewed journal and conference publications. Dr. Going was a Gates-Cambridge Scholar, and was a recipient of the NDSEG Fellowship, the NSF Graduate Fellowship, and the Sevin Rosen Funds Award for Innovation.