R. A. Izmailov - Department of Electrical Engineering, Katholieke Universiteit Leuven

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Understanding the Slow Erase Operation in IGZO-channel FeFETs: the Role of Positive Charge Generation Kinetics

Zhuo Chen,Nicolò Ronchi,Roman Izmailov,Hongwei Tang,Mihaela I. Popovici,Harold Dekkers, Alexandru Pavel,Geert Van den bosch,Maarten Rosmeulen,Valeri V. Afanas’ev,Jan Van Houdt

IEEE Journal of the Electron Devices Societyno. 99 (2025): 1-1

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First Demonstration of 3D Stacked FeFET Memory Devices with Vertical IGZO Channel-Last Process for Dense Non-Volatile Memory

Roman Izmailov,Nicolò Ronchi, Jie Li,Mihaela Ioana Popovici,Kostantine Katcko,Zhuo Chen,Laurent Breuil,Nina Bazzazian,Kaustuv Banerjee, Iuliana Rachita,Geert Van den bosch,Maarten Rosmeulen,Jan Van Houdt

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Electron Emission from Deep Traps in HfO2 under Thermal and Optical Excitation

Roman Izmailov,Jack Strand,Nicolo Ronchi,Alexander Shluger,Valeri Afanas'ev

PHYSICAL REVIEW Bno. 13 (2024)

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Plasma Etch of IGZO Thin Film and IGZO/SiO2 Interface Diffusion in Inductively Coupled CH4/Ar Plasmas

Jie Li,Shreya Kundu,Laurent Souriau,Philippe Bezard,Roman Izmailov,Frederic Lazzarino

PLASMA PROCESSES AND POLYMERS (2024)

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Gate Side Injection Operating Mode for 3D NAND Flash Memories

L. Breuil,R. Izmailov,M. Popovici,J. Stiers,A. Arreghini,S. Ramesh,G. Van den Bosch,J. Van Houdt,M. Rosmeulen

2024 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW (2024)

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A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Towards Interlayer-free FeFETs

Zhuo Chen,Nicolo Ronchi,Hongwei Tang,Amey M. Walke,Roman Izmailov,Mihaela Ioana Popovici,Geert van den Bosch,Maarten Rosmeulen,Valeri V. Afanas'ev,Jan Van Houdt

IEEE Electron Device Lettersno. 8 (2024): 1453-1456

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Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO

S. Mukherjee,J. Bizindavyi,S. Clima,Y. Xiang,M. I. Popovici,A. Belmonte,R. Izmailov,J. Stiers,A. Kruv,S. Subhechha,H. Dekkers,G. S. Kar, G. De,N. Ronchi, Z. Belkhiri,G. Van Den Bosch,M. Rosmeulen,F. Catthoor, S. Yu,V. V. Afanas'ev,J. Van Houdt

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs

Zhuo Chen,Nicolo Ronchi,Kaustuv Banerjee,Roman Izmailov,Amey M. Walke,Mihaela Popovici,Harold Dekkers, Alexandru Pavel,Geert Van den Bosch,Maarten Rosmeulen,Valeri Afanas'ev,Jan Van Houdt

2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024pp.661-664, (2024)

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Novel Design Strategy for High-Endurance $(> 10^{10})$ and Fast-Erase Oxide-Semiconductor Channel FeFET

Zhuo Chen, Hyun-Cheol Kim, Wei Zheng,Roman Izmailov,Brecht Truijen,Subhali Subhechha,Amey M. Walke,Adrian Chasin,Mihaela I. Popovici, Jie Li,Anastasiia Kruv,Hongwei Tang, Fengben Xi,Geert Van den Bosch,Maarten Rosmeulen,Nicolò Ronchi,Valeri Afanas'ev,Jan Van Houdt

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Deep Electron Traps in HfO2-based Ferroelectrics: (Al/si-Doped) HfO2 Versus HfZrO4

R. A. Izmailov,B. J. O'Sullivan,M. I. Popovici,V. V. Afanas'ev

Solid-state electronics（2022）

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