Ray-Ming Lin

Ray-Ming Lin received the Ph.D. degree in electrical engineering from the National Taiwan University, Taiwan, Republic of China, in 1997. During his Ph.D. study, he concentrated in the MBE growth and device application of metamorphic InGaAs and InAlAs on GaAs, quantum dot light emitting diodes, and room temperature infrared sensors. From 1997 to 1999, he joined the Planning and Evaluation Division, National Science Council, as an Assistant Research Fellow. Since August 1999, he has been with the Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan, where he is currently a Full Professor. Since August 2001, he has also been appointed as the Director of the Right and Technology Transfer Center at Chang Gung University. He has published over 84 technical articles in reviewed archival journals. His interests have been focused mainly on the development of epitaxial technologies. His current research interests include the areas of MOCVD growth of nitride-based heterostructures, in-situ fabrication of low-dislocation density, high-efficiency optoelectronic, and high electron mobility transistor (HEMT) structures.