Fabrication of Biologically Sensitive Si Nanowire Field-Effect-Transistors applied to Electrical Label-Free DNA Hybridization Detection.
We demonstrated the fabrication of CMOS compatible biologically sensitive FETs. Based on a wide range of design with various NW width and length, we first validated the device fabrication process by measuring pH response of Ion sensitive FETs beyond the theoretical limit value of the pH voltage sensitivity, known as the Nernst limit (59 pH/mV). Finally, we demonstrated the label-free DNA hybridization detection highlighted by a significant increase of threshold voltage (+200 mV) due to negatively charges DNA.