Sachin V. Joshi

Sachin Joshi was born in Pune, India. He received the B.E. degree in electrical engineering from the Government College of Engineering, Pune, in June 2002 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Texas, Austin (UT Austin), in August 2004 and May 2007, respectively. From May 2003 to January 2007, he was a Research Assistant at the Microelectronics Research Center, UT Austin, pursuing a wide range of research interests, primarily in novel channel materials, including germanium, strained silicon, and hybrid crystal orientations, and also in nanocrystal-based flash memories and nanowire-based devices. In the summer of 2005, he was an Intern at the IBM Corporation, Hudson Valley Research Park, Fishkill, NY. In the summer of 2006, he was an Intern at the Advanced Technology Development Facility, Austin, working on germanium channel devices with a research group from Semiconductor Manufacturing Technology, as well as the hybrid orientation technology development in collaboration with a research team from the Texas Instruments Inc., United Microelectronics Corporation Inc., and MEMC Electronic Materials Inc. He joined the Intel Corporation as an Integration Engineer in February 2007, where he is currently a part of a joint development program with Micron Technology, Boise, ID. He is the author or coauthor of over 35 journal and conference proceedings. His current research interests include alternative architectures for solid-state ULSI memories. Dr. Joshi was awarded the Young Scientist Award at the 34th Conference on Physics and Chemistry of Semiconductor Interfaces for his work on the theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology. He was also awarded the Applied Materials Graduate Fellowship for the year 2003–2004.