Uwe Schroeder

Uwe Schroeder (Senior Member, IEEE) received the Ph.D. degree from the University of Bonn, Germany. He has been the Deputy Scientific Director with NaMLab, Dresden, since 2009. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he has been worked at the Infineon/Qimonda DRAM Development Center, Fishkill, New York, and Dresden, Germany, since 1997. He developed high-k dielectrics for integration into DRAM capacitors. During this time, the previously unknown ferroelectric properties of doped HfO₂-based dielectrics were discovered in 2007. He worked as a Postdoctoral Researcher at the University of Chicago. He is (co-)author of more than 530 papers and conference contributions and more than 30 patents, including more than 200 peer-reviewed publications, 65 invited presentations on ferroelectric HfO₂ material properties and devices based thereon. His research stay at UC California, Berkeley. His research focuses on the material properties of ferroelectric hafnium oxide and its integration into future devices. Dr. Schroeder is a member of the IEEE IEDM technical program committee. He is the 2019 recipient of the FMA International Award for Ferroelectric Materials and Their Applications. He has co-edited a book on ferroelectric HfO₂, was an Editorial Board of IEEE Electron Devices Letters.