Travis J. Anderson - Naval Research Laboratory, Washington, DC 20375, USA

基本信息

Career Trajectory

Bio

Travis J. Anderson received the B.S. degree in chemical engineering from the Georgia Institute of Technology in 2004 and the Ph.D. degree in chemical engineering from the University of Florida in 2008. He is a Civilian Staff Scientist with the U.S. Naval Research Laboratory.

Research Interests

Papers共 475 篇Author StatisticsCo-AuthorSimilar Experts

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Single-Event Transients in Vertical GaN Diodes with N-Implanted Hybrid Edge Termination

Andrew D. Koehler,Ani Khachatrian,Alan G. Jacobs,James Spencer Lundh,Adrian Ildefonso,Cory D. Cress,Geoffrey M. Foster,Tolen Nelson,Daniel Georgiev,Raghav Khanna,Karl D. Hobart,Travis J. Anderson

IEEE Transactions on Nuclear Science（2025）

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Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Henry T. Aller,Thomas W. Pfeifer,Abdullah Mamun,Kenny Huynh,Marko Tadjer,Tatyana Feygelson,Karl Hobart,Travis Anderson,Bradford Pate,Alan Jacobs,James Spencer Lundh,Mark Goorsky,Asif Khan,Patrick Hopkins,Samuel Graham

Advanced Materials Interfacesno. 3 (2025): n/a-n/a

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Assessment of Channel Temperature in Β-(Alxga1−x)2o3/ga2o3 Heterostructure Field-Effect Transistors Using Visible Wavelength Thermoreflectance Thermal Imaging

James Spencer Lundh,Georges Pavlidis,Kohei Sasaki,Andrea Centrone,Joseph A. Spencer,Hannah N. Masten,Marc Currie,Alan G. Jacobs,Keita Konishi,Akito Kuramata,Karl D. Hobart,Travis J. Anderson,Marko J. Tadjer

APPLIED PHYSICS LETTERS（2024）

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Prakash Pandey,Tolen M. Nelson,Michael R. Hontz,Daniel G. Georgiev,Raghav Khanna,Alan G. Jacobs, James S. Lundh,James C. Gallagher,Andrew D. Koehler,Karl D. Hobart,Travis J. Anderson

IEEE Transactions on Electron Devices（2024）

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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN P-I-n Diodes with Avalanche Capability

James Spencer Lundh,Alan G. Jacobs,Prakash Pandey,Tolen Nelson,Daniel G. Georgiev,Andrew D. Koehler,Raghav Khanna,Marko J. Tadjer,Karl D. Hobart,Travis J. Anderson

IEEE Electron Device Lettersno. 5 (2024): 873-876

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Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface

Daniel Francis, Xiaoyang Ji,Sai Charan Vanjari,Marko Tadjer,Tatyana Feygelson,James Spencer Lundh,Hannah Masten,Joseph Spencer,Alan G. Jacobs,Travis J. Anderson,Karl D. Hobart,Bradford Pate,Martin Kuball,Felix Ejeckam

Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)no. 32 (2024): 1567-1567

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PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ Β-Ga2o3 Substrates

Joseph Spencer,Alan G. Jacobs,Karl D. Hobart,Andrew D. Koehler,Travis J. Anderson,Yuhao Zhang,Marko J. Tadjer

Journal of Electronic Materialsno. 6 (2024): 2798-2805

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Detecting Defects That Reduce Breakdown Voltage Using Machine Learning and Optical Profilometry

James C. Gallagher,Michael A. Mastro,Alan G. Jacobs,Robert. J. Kaplar,Karl D. Hobart,Travis J. Anderson

SCIENTIFIC REPORTSno. 1 (2024)

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Silicon Ion Implant Activation in Β-(Al0.2ga0.8)2o3

Alan G. Jacobs,Joseph A. Spencer,Marko J. Tadjer,Boris N. Feigelson, Abbey Lamb, Ming-Hsun Lee,Rebecca L. Peterson,Fikadu Alema,Andrei Osinsky,Yuhao Zhang,Karl D. Hobart,Travis J. Anderson

Journal of Electronic Materials（2024）

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Electrothermal Enhancement of Β-(Alxga1-x)2o3/ga2o3 Heterostructure Field-Effect Transistors Via Back-End-of-line Sputter-Deposited AlN Layer

James Spencer Lundh,Cory Cress,Alan G. Jacobs,Zhe Cheng,Hannah N. Masten,Joseph A. Spencer,Kohei Sasaki,James Gallagher,Andrew D. Koehler,Keita Konishi,Samuel Graham,Akito Kuramata,Travis J. Anderson,Marko J. Tadjer,Karl D. Hobart,Michael A. Mastro

JOURNAL OF APPLIED PHYSICSno. 22 (2024)

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