Vladimir Bratov (M'04) was born in Moscow, U.S.S.R., in 1952. He received the Engineer-Physicist degree and the Ph.D. degree in electronics from the Moscow Institute of Electronic Engineering (MIET), Moscow, U.S.S.R., in 1976, and 1991, respectively. He worked at the Integrated Circuits (IC) Department, MIET, in 1976, designing SRAMs and other high-speed circuits in GaAs. In 1980, he started lecturing in semiconductor device physics, IC design, and modern IC testing. During this period, he also worked as a consultant in computer-aided design (CAD) tools and IC design for the Middlesex University (London, UK), Samsung (Moscow Design Center), and the 13th Research Institute (Hebei, China). In 1999, he joined the Multilink Technology Corporation (Santa Monica, CA) designing and managing the development of high-speed serializers/deserializers in SiGe BiCMOS technologies. Since 2003, he has been working as the Director of IC design and later as the Vice President of Engineering at Advance Science and Novel Technology (ADSANTEC), Rancho Palos Verdes, CA. His interests include schematic and layout design of high-speed mixed-signal circuits including libraries of standard cells, special input–output buffers, and complete systems-on-chip, as well as algorithms and CAD procedures for the design process automation. He is the author and coauthor of more than ten journal and conference papers and the holder of more then ten patents and invention certificates. Dr. Bratov received a silver medal from the All-Russian Technical Exhibition in 1991 for a set of educational laboratory equipment and educational programs in Semiconductor Physics, and the Associate Professor Certificate of Russian Federation in 1995.