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Research Interests

Papers共 251 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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Studies on the Doping Mechanism and Strain State Effect of AlGaN/GaN Double Channel Heterostructures with Si-doped Barrier
Baiqi Wang,Yachao Zhang,Shengrui Xu, Yixin Yao,Wenjun Liu, Chenglin Du, Xiaolong Cai,Sheng Wu,Haijun Liu,Yu Zhang, Xue Tang,Jincheng Zhang,Yue Hao
Materials Science in Semiconductor Processing (2025)
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0
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High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate
Xia An,Shengrui Xu,Hongchang Tao,Huake Su, He Yang, Kang Xu, Lei Xie, Jingyu Jia,Jincheng Zhang,Yue Hao
JOURNAL OF INORGANIC MATERIALSno. 1 (2025): 91-96
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0
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A 614 MW/cm2 AlGaN-channel Schottky Barrier Diode with High Breakdown Voltage and High Temperature Sensitivity
Heyuan Chen,Tao Zhang, Huake Su, Xiangdong Li,Shengrui Xu,Yachao Zhang, Ruowei Liu, Lei Xie,Yue Hao,Jincheng Zhang
APPLIED PHYSICS LETTERSno. 1 (2025)
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Investigations of Modulation Method and Stress Mechanism for the Growth of AlGaN Channel Heterostructures
Baiqi Wang,Yachao Zhang,Shengrui Xu, Yixin Yao,Wenjun Liu, Chenglin Du, Xiaolong Cai,Sheng Wu,Haijun Liu, Yu Zhang, Xue Tang,Jincheng Zhang,Yue Hao
NANOTECHNOLOGYno. 12 (2025)
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Visual Place Recognition for Opposite Viewpoints and Environment Changes
Peng Li,Shuhuan Wen,Chengrui Xu,Tony Z. Qiu
IEEE Transactions on Instrumentation and Measurement (2024): 1-9
Cited2Views0EIWOSBibtex
2
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The Enhanced GaN Deposition on Highly N-incorporated Diamond Substrate
Yuan Gao,Shengrui Xu,Hongchang Tao,Huake Su, Xu Liu, Lei Xie, Kang Xu, Xia An,Jincheng Zhang,Yue Hao
Materials Letters (2024): 136865-136865
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Ar Ion Implantation on Sapphire Substrate Induced Nucleation Improves Crystal Quality of GaN
AN Xia,XU Shengrui, TAO Hongchang,SU Huake, YANG He, XU Kang, XIE Lei, JIA Jingyu,ZHANG Jincheng,HAO Yue
Journal of Inorganic Materials (2024)
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Author Statistics

#Papers: 282

#Citation: 2929

H-Index: 26

G-Index: 41

Sociability: 6

Diversity: 3

Activity: 86

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