Yijun Shi - The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute

基本信息

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个人简介

Yijun Shi received the B.Sc. and M.Sc. degrees in electrical engineering from Shanghai Jiao Tong University, in 2004 and 2007, respectively. From 2007 to 2012, he was with National Instruments, where he was researching in the general area of digital signal processing and its implementation on FPGA. Since 2012, he has been with the National Engineering and Research Center of Digital Television. His research interests are mainly in physical layer of broadcasting systems.

研究兴趣

论文共 136 篇作者统计合作学者相似作者

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Analysis of Degradation Behavior and Mechanism of P-Gan Gate HEMT under High-Power Microwave Irradiation

Mingen Lv,Jing Xiao,Ming Tao,Yijun Shi,Zongqi Cai, Xinghuan Chen,Yuan Chen,Kai Tang,Min He,Guoguang Lu,Liang He

IEEE Transactions on Electron Devicesno. 99 (2025): 1-6

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Characteristics of 3D-Integrated GaN Power Module under Multi Heat Source Coupling

Yijun Shi, Mingen Lv,Guoguang Lu, Caixing Hui,Liang He, Xinghuan Chen,Yuan Chen,Xiangjun Lu

Materials (Basel, Switzerland)no. 5 (2025)

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Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Zhiyuan He,Liang He, Kun Jiang, Xiaoyue Duan,Yijun Shi,Xinghuan Chen, Yuan Chen,Hualong Wu,Guoguang Lu,Yiqiang Ni

JOURNAL OF PHYSICS D-APPLIED PHYSICSno. 40 (2024)

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Bipolar Degradation of SiC MOSFET Body Diode under Constant Current Stress

Zijun Cheng, Mingen Lv,Dongsheng Zhao,Shengdong Hu,Yijun Shi,Shuanzhu Fang,Jianlin Zhou,Yiqiang Chen,Guoguang Lu

2024 25TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT (2024)

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A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor

Chao Liu,Yijun Shi,Zhiyuan He,Zongqi Cai,Xu Huang,Yiqiang Chen,Wanjun Chen,Ruize Sun,Guoguang Lu,Bo Zhang

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 1 (2024): 510-515

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Effect of the off State/Half-On State/On State Electrical Stresses on the Reliability of Packaged D-Mode GaN/AlGaN HEMTs

Dongsheng Zhao,Lijuan Wu,Yijun Shi, Qingzong Xiao,Guoguang Lu,Zhiyuan He,Liang He, Zigui Tu, Jie Yuan

2024 25TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT (2024)

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Electro-Thermal Reliability Analysis of Electromigration in 3-D TSV-RDL Interconnects

Yiming Zhang,Wenchao Tian,Hongyue Wang,Xiaowen Zhang,Weiheng Shao,Bin Zhou,Yijun Shi, Weixi Gong,Rui Deng, Jianguo Zhao, Pan Wang, Yang Feng

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGYno. 1 (2024): 157-165

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Physical Insight into the Abnormal VTH Instability of Schottky P-Gan HEMTs under High-Frequency Operation

Xinghuan Chen,Zhiyuan He,Yijun Shi,Zeheng Wang,Fangzhou Wang,Ruize Sun,Yiqiang Chen,Yuan Chen,Liang He,Guoguang Lu,Wanjun Chen,Chao Liu,Bo Zhang

APPLIED PHYSICS LETTERSno. 17 (2024)

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“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type P-Gan Gate HEMTs

Yunfeng Hu,Liang He, Meng Dong,Xinghuan Chen,Yijun Shi,Zhiyuan He,Zongqi Cai,Yiqiang Ni,Hongyue Wang,Zhizhe Wang,Yuan Li,Xiaoli Lu,Yuan Chen,Yiqiang Chen

IEEE ELECTRON DEVICE LETTERSno. 12 (2024): 2299-2302

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Characterization of Stress Voltage/Time-Dependent Dynamic RDS,ON in 600 V-Rated GaN Power Devices

Liang He, Wanting Bai, Yao Li, Shuqiang Liu,Yijun Shi, Yiqiang Li,Yuan Chen,Zhiyuan He,Yiqiang Chen,Guoguang Lu

2024 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA 2024 (2024)

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