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Research Interests

Papers共 251 篇Author StatisticsCo-AuthorSimilar Experts

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High-Performance Gate-All-Around FETs with 100 Ω Parasitic Resistance and 965 Μa/μm On-State Current Using Quasi-Self-Aligned Landing Pads
R. J. Jiang, P. Wang, J. X. Yao, X. X. Zhang, L. Cao,J. J. Li, G. Q. Sang,X. B. He, N. Zhou, Y. D. Zhang, C. C. Zhang, Z. H. Zhang,G. B. Bai, Y. H. Lu, L. L. Li, Q. K. Li,J. F. Gao, J. F. Li,Qingzhu Zhang,Huaxiang Yin, J. Luo, B. W. Dai
IEEE ELECTRON DEVICE LETTERSno. 1 (2025): 4-7
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Performance Improvement of Monolithic CFET by Backside Enhanced Contact with C-type Source/Drain Contact Technology
Jie Xu, Lei Cao, Yuzhe Yu, Qingkun Li, Hang Zhang, Lianlian Li,Kun Luo,Qingzhu Zhang,Zhenhua Wu,Huaxiang Yin
2025 Conference of Science and Technology of Integrated Circuits (CSTIC)pp.1-3, (2025)
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Si Nanowire Arrays FET Sensor and Interface Optimization Design for Ultrasensitive Protein Molecule Detection
Rui Jiang, Meiyan Qin, Jiawei Hu, Lingqian Zhang,Yang Zhao,Qingzhu Zhang,Mingxiao Li,Chengjun Huang
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells Via Source/Drain Doping Engineering
Xuexiang Zhang, Qingkun Li, Lei Cao,Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao,Huaxiang Yin
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2025): 86-92
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Impact of Gate Length on the Electrical Characteristics of Junctionless FDSOI Strained SiGe Channel P-Finfet
Hongxiao Lin, Yuanhao Miao, Yuhui Ren,Yongkui Zhang,Qingzhu Zhang, Wenjuan Xiong, Jiahan Yu, Xuewei Zhao,Renrong Liang,Jun Xu,Tianchun Ye,Henry H. Radamson
Journal of Materials Science Materials in Electronicsno. 15 (2025): 1-15
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Author Statistics

#Papers: 255

#Citation: 6267

H-Index: 36

G-Index: 74

Sociability: 8

Diversity: 3

Activity: 45

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