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Research Interests

Papers共 32 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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29.2 A 0.021µm 2 High-Density SRAM in Intel-18A-RibbonFET Technology with PowerVia-Backside Power Delivery
Xiaofei Wang, Yusung Kim, Gwanghyeon Baek, Kunal Girish Bannore, Kaushal Dave, Arash Joushaghani, Narae Kang, Minwoo Ko, Anandkumar Mahadevan Pillai, Hema Chandra Prakash Movva,Gyusung Park, Muktadir Rahman, Seenivasan Subramaniam, Vinay Vashishtha, Teng Yang,Zheng Guo,Eric A. Karl
IEEE International Solid-State Circuits Conferencepp.494-496, (2025)
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29.2 A $\boldsymbol{0.021}\boldsymbol{\mu}\mathbf{m^{2}}$ High-Density SRAM in Intel-18A-RibbonFET Technology with PowerVia-Backside Power Delivery
Xiaofei Wang, Yusung Kim, Gwang Hyeon Baek, Kunal Girish Bannore, Kaushal Dave, Arash Joushaghani, Narae Kang, Minwoo Ko,Anandkumar Mahadevan Pillai, Hema Chandra Prakash Movva,Gyusung Park,Muktadir Rahman, Seenivasan Subramaniam, Vinay Vashishtha, Teng Yang,Zheng Guo, Eric A Karl
2025 IEEE International Solid-State Circuits Conference (ISSCC) (2025): 494-496
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Author Statistics

#Papers: 32

#Citation: 1442

H-Index: 21

G-Index: 27

Sociability: 4

Diversity: 2

Activity: 2

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