A Computationally Efficient Compact Model for Fully-Depleted Soi Mosfets with Independently-Controlled Front- and Back-Gates
SOLID-STATE ELECTRONICS（2011）
关键词
Berkeley short channel insulated-gate FET model (BSIM),Compact modeling,Double-gate MOSFET,Fully-depleted SOI MOSFET,Computational efficiency
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要