Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-Annealed Polysilicon by Rapid Energy Transfer Annealing
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS（2003）
Key words
implanted dopant phosphorus atoms,laser-annealed polysilicon films,rapid energy transfer annealing,amorphous silicon films,polysilicon films
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