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SiGe-Channel Confinement Effects for Short-Channel PFETs with Nonbandedge Gate Workfunctions

B. Winstead,W. J. Taylor,E. Verret,K. Loiko,D. Tekleab,C. Capasso, A. Foisy, S. B. Samavedarn

IEEE electron device letters（2007）

Cited 10|Views21
Key words
buried channel,gate workfunction,metal gate,SiGe-channel confinement effects,SiGe-channel MOSFET,silicon germanium,ultrathin-body (UTB)
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