First Experimental Demonstration of SiC Super-Junction (SJ) Structure by Multi-Epitaxial Growth Method
International Symposium on Power Semiconductor Devices and IC's（2014）
Key words
epitaxial growth,power semiconductor devices,semiconductor device breakdown,silicon compounds,wide band gap semiconductors,SiC,breakdown voltage,drift layer,multiepitaxial growth method,super-junction structure,test elemental groups,unipolar power devices,voltage 1545 V
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