Bias Temperature Instability Investigation of Double-Gate FinFETs

C. D. Young,A. Neugroschel,K. Majumdar, Z. Wang,K. Matthews,C. Hobbs

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)（2014）

Cited 3|Views3

Key words

MOSFET,integrated circuit reliability,negative bias temperature instability,silicon-on-insulator,SOI wafers,bias temperature instability investigation,bond breaking trap centers,crystallographic sidewall orientation,double gate FinFET,fin width dependence,negative stress bias,sidewall device channel region,silicon on insulator wafers,surface bonds

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