Effect of Non-Pinned Carrier Density above Threshold in Inas Quantum Dot and Quantum Dash Lasers
IET Optoelectronics（2014）
Key words
carrier density,III-V semiconductors,indium compounds,quantum dot lasers,quantum optics,semiconductor quantum dots,stimulated emission,quantum dash lasers,indium arsenide quantum dot lasers,indium arsenide quantum dash lasers,carrier density nonpinning,laser performance,room temperature emission wavelengths,nonthermal carrier distribution,nonradiative recombination,stimulated emission,temperature 293 K to 298 K,wavelength 0,98 mum to 1,52 mum,InAs
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